1.2v drive pch mosfet RU1C002ZP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 RU1C002ZP ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 20 v gate-source voltage v gss ? 10 v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s ? 100 ma pulsed i sp ? 800 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a reference land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a reference land. parameter type source current (body diode) drain current parameter *2 *1 * (1) gate (2) source (3) drain ? 1 body diode ? 2 esd protection diode *1 umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 abbreviated symbol : yk ?2 ?1 (3) (1) (2) 1/5 2011.09 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RU1C002ZP ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 10v, v ds =0v drain-source breakdown voltage v (br)dss ? 20 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 20v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 10v, i d = ? 100 ? a - 0.8 1.2 i d = ? 200ma, v gs = ? 4.5v - 1.0 1.5 i d = ? 100ma, v gs = ? 2.5v - 1.3 2.2 i d = ? 100ma, v gs = ? 1.8v - 1.6 3.5 i d = ? 40ma, v gs = ? 1.5v - 2.4 9.6 i d = ? 10ma, v gs = ? 1.2v forward transfer admittance l y fs l 0.2 - - s v ds = ? 10v, i d = ? 200ma input capacitance c iss - 115 - pf v ds = ? 10v output capacitance c oss - 10 - pf v gs =0v reverse transfer capacitance c rss - 6 - pf f=1mhz turn-on delay time t d(on) -6-nsv dd ? 10v, i d = ? 100ma rise time t r -4-nsv gs = ? 4.5v turn-off delay time t d(off) - 17 - ns r l =100 ? fall time t f - 17 - ns r g =10 ? total gate charge q g - 1.4 - nc v dd ? 10v, i d = ? 200ma gate-source charge q gs - 0.3 - nc v gs = ? 4.5v gate-drain charge q gd - 0.3 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 200ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * 2/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1C002ZP ? electrical characteristic curves (ta = 25c) 0 0.05 0.1 0.15 0.2 0246810 ta=25c pulsed v gs = -1.0v v gs = -1.2v v gs = -4.5v v gs = -2.5v v gs = -1.8v v gs = -1.5v 0 0.05 0.1 0.15 0.2 0 0.2 0.4 0.6 0.8 1 v gs = -2.5v v gs = -2.0v v gs = -1.8v v gs = -10.0v v gs = -4.5v v gs = -3.2v v gs = -1.2v v gs = -1.0v v gs = -1.5v ta=25c pulsed 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 v ds = -10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.2v v gs = -1.5v v gs = -1.8v v gs = -2.5v v gs = -4.5v ta=25c pulsed 100 1000 10000 0.001 0.01 0.1 1 v gs = -2.5v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -4.5v pulsed ta=125c ta=75c ta=25c ta= -25c 100 1000 10000 0.001 0.01 0.1 1 v gs = -1.8v pulsed ta=125c ta=75c ta=25c ta= -25c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) drain current : -i d [a] drain-source voltage : -v ds [v] drain-source voltage : -v ds [v] drain current : -i d [a] drain current : -i d [a] gate-source voltage : -v gs [v] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.5v pulsed ta=125c ta=75c ta=25c ta= -25c fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : -i d [a] static drain-source on-state resistance : r ds (on)[m ? ] 100 1000 10000 0.001 0.01 0.1 v gs = -1.2v pulsed ta=125c ta=75c ta=25c ta= -25c drain-current : -i d [a] fig.9 static drain-source on-state resistance vs. drain current( ) static drain-source on-state resistance : r ds (on)[m ? ] 3/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1C002ZP 0 1 2 3 4 5 0246810 ta=25c pulsed i d = -0.01a i d = -0.2a 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed ta=125c ta=75c ta=25c ta=-25c 0 1 2 3 4 5 0 0.5 1 1.5 ta=25c v dd = -10v i d = -0.2a r g =10? pulsed 1 10 100 1000 0.01 0.1 1 10 100 coss crss ta=25c f=1mhz v gs =0v ciss 0.1 1.0 0.01 0.1 1 v ds = -10v pulsed ta=-25c ta=25c ta=75c ta=125c 1 10 100 1000 0.01 0.1 1 t r t f t d (on) t d (off) ta=25c v dd = -10v v gs =-4.5v r g =10? pulsed fig.11 reverse drain current vs. sourse-drain voltage fig.12 static drain-source on-state resistance vs. gate source voltage fig.10 forward transfer admittance vs. drain current fig.14 dynamic input characteristics fig.15 typical capacitance vs. drain-source voltage fig.13 switching characteristics f o rward tran s fer admittan c e : | y f s | [s] drain-current : -i d [a] rever s e drain c urrent : -is [ a ] source-drain voltage : -v sd [v] static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : -v gs [v] switching time : t [ns] drain-current : -i d [a] gate-source voltage : -v gs [v] total gate charge : qg [nc] drain-source voltage : -v ds [v] c apa c itan c e : c [p f ] 4/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RU1C002ZP ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 5/5 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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